Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures

Abstract

In modern GaAs/Al${}_x$Ga${}_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is located within a narrow GaAs well, flanked by narrow AlAs layers which capture excess electrons from donors. We show that each excess electron is localized in a compact dipole atom with the nearest donor. Nevertheless, excess electrons screen both the remote donors and background impurities. When the fraction of remote donors filled by excess electrons $f$ is small, the remote donor limited quantum mobility grows as $f^3$ and becomes larger than the background impurity limited one at a characteristic value $f_c$. We also calculate both the mobility and the quantum mobility limited by the screened background impurities with concentrations $N_1$ in Al${}_x$Ga${}_{1-x}$As and $N_2$ in GaAs, which allows one to estimate $N_1$ and $N_2$ from the measured mobilities. Taken together, our findings should help to identify avenues for further improvement of modern heterostructures.

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Cited by in corpus (22)

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• Working principles of doping-well structures for high-mobility two-dimensional electron systems
• Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells
• Anomalous Nematic States in High Half-Filled Landau Levels
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
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• Resistivity anisotropy of quantum Hall stripe phases
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• Milli-Tesla Quantization enabled by Tuneable Coulomb Screening in Large-Angle Twisted Graphene
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• Hidden Quantum Hall Stripes in Al${}_x$Ga${}_{1-x}$As/Al${}_{0.24}$Ga${}_{0.76}$As Quantum Wells
• Bound state-continuum resonance transition in a shallow quantum well
• Sensing the binding and unbinding of anyons at impurities
• Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells
• Heterostructure design to achieve high quality, high density GaAs 2D electron system with $g$-factor tending to zero
• Impact of in-situ controlled disorder screening on fractional quantum Hall effects and composite-fermion transport
• Oscillatory photoresistance on the high field side of the cyclotron resonance