Efficient domain wall motion in asymmetric magnetic tunnel junctions with vertical current flow

Abstract

In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We show that as we increase the MTJ asymmetry, by considering dissimilar ferromagnetic contacts, a linear-in-voltage field-like torque behavior is accompanied by an enhancement in the domain wall displacement efficiency and a higher degree of bidirectional propagation. Our analysis is based on a combination of a quantum transport model and magnetization dynamics as described by the Landau-Lifshitz-Gilbert equation, along with comparison to the intrinsic characteristics of a benchmark in-plane current injection domain wall device.

arXiv comment6 pages, 4 figures

References in corpus (12)

• The design and verification of Mumax3
• Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion
• Switching a spin-valve back and forth by current-induced domain wall motion
• Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions
• Current-induced domain wall motion in compensated ferrimagnet
• Vertical current induced domain wall motion in MgO-based magnetic tunnel junction with low current densities
• High-speed domain wall racetracks in a magnetic insulator
• High domain wall velocities due to spin currents perpendicular to the plane
• Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing
• Tuning domain wall velocity with Dzyaloshinskii-Moriya interaction
• Automotion of Domain Walls for Spintronic Interconnects
• Bidirectional switching assisted by interlayer exchange coupling in asymmetric magnetic tunnel junctions