164 citations · 715 across the 25 of their papers we have counts for
19 papers · 1 filter
Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions
Shili Yan, Haitian Su, Dong Pan +8
High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due…
Quantifying quantum coherence of multiple-charge states in tunable Josephson junctions
Jiangbo He, Dong Pan, Mingli Liu +11
Coherence and tunneling play central roles in quantum phenomena. In a tunneling event, the time that a particle spends inside the barrier has been fiercely debated. This problem be…
Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor
Weijie Li, Zhihai Liu, Jingwei Mu +4
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and…
Gatemon qubit based on a thin InAs-Al hybrid nanowire
Jierong Huo, Zezhou Xia, Zonglin Li +12
We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the str…
Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
Li Zhang, Yuanjie Chen, Dong Pan +3
Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and character…
Electrically tunable spin-orbit interaction in an InAs nanosheet
Furong Fan, Yuanjie Chen, Dong Pan +2
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer charac…