4 citations · 9 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2017★ 3 cited
Theoretical investigation of an in situ k-restore process for damaged ultra-low-k materials based on plasma enhanced fragmentation
A. Förster, C. Wagner, S. Gemming +1
We present theoretical investigations of a k-restore process for damaged pourous ultra-low-k (ULK) materials. The process is based on plasma enhanced fragmented silylation precurso…
physics.chem-ph2017★ 2 cited
Theoretical investigation of in situ k-restore processes for damaged ultra-low-k dielectrics
A. Förster, C. Wagner, J. Schuster +1
Ultra-low-k (ULK) materials are essential for today's production of integrated circuits (ICs). However, during the manufacturing process the ULK's low dielectric constant (k-value)…
cond-mat.mes-hall2017★ 4 cited
Ab-initio Study of the Trimethylaluminum Atomic Layer Deposition Process on Carbon Nanotubes - An Alternative Initial Step
A. Förster, C. Wagner, J. Schuster +1
Electronic applications of carbon nanotubes (CNTs) require the deposition of dielectric films on the tubes while conserving their excellent electronic properties. In our density fu…