979 citations · 2.4k across the 16 of their papers we have counts for
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Interaction-induced crossover between weak anti-localization and weak localization in a disordered InAs/GaSb double quantum well
Vahid Sazgari, Gerard Sullivan, Ismet I. Kaya
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we…
Localization of trivial edge states in InAs/GaSb composite quantum wells
Vahid Sazgari, Gerard Sullivan, İsmet İ. Kaya
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant hig…
Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells
Zhongdong Han, Tingxin Li, Long Zhang +2
We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated b…
Microwave Photocurrent from the Helical Edge state of InAs/GaInSb Bilayers
Jie Zhang, Tingxin Li, Rui-Rui Du +1
We measure microwave photocurrent in devices made from InAs/GaInSb bilayers where both insulating bulk state and conducting edge state were observed in the inverted-band regime, co…
Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
Tingxin Li, Pengjie Wang, Gerard Sullivan +2
We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature…
Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
Lingjie Du, Tingxin Li, Wenkai Lou +8
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the…