4 papers
Enhanced low-flux sensitivity (ELFS) effect of neutron-induced displacement damage in bipolar devices: physical mechanism and parametric model
Yang Liu, Ying Zhang, Mu Lan +2
Similar to the enhanced low-dose-rate sensitivity (ELDRS) effect of ionization damage, an enhanced low-flux senstivity (ELFS) effect has been reported in ions/neutron irradiation o…
Ultra-Slow Dynamic Annealing of Neutron-induced Defects in n-type Silicon: Role of Charge Carriers
Ying Zhang, Yang Liu, Hang Zhou +3
Neutron bombardments with equivalent fluence (110 cm) and different fluxes (10 cms to 10 cms) have bee…
Strong Proton-Defect Interaction in Synergistic Irradiation Damage System
Ying Zhang, Yang Liu, Jie Zhao +3
We experimentally investigated total ionizing dose (TID) response of the input-stage PNP transitor in an operational amplifier LM324N with various initial displacement damage (IDD)…
Reduced Low Dose Rate Sensitivity and its Mechanism in Bipolar Junction Transistors
Xiao-Long Feng, Zi-Bo Wang, Yang Liu +1
It is surprising that only an enhanced low-dose-rate sensitivity (ELDRS), but not its contrariety, a reduced low-dose-rate sensitivity (RLDRS), is experimentally observed in bipola…