2 citations · 3 across the 5 of their papers we have counts for
5 papers
High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN
Jiahao Dong, Auditee Majumder Momo, Austin Fehr +6
Carbon-doped GaN is a promising material for sub-bandgap triggered optical switches. When incorporated in GaN, carbon introduces deep compensating centers that enable defect-mediat…
On the Origin of Carrier Loss in Mg-Doped N-Polar GaN
Masahiro Kamiyama, Shashwat Rathkanthiwar, Cristyan Quiñones-García +6
The neutral complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] e…
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Y. Wang, K. Huynh, M. E. Liao +9
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…
Structure of Native Two-dimensional Oxides on III--Nitride Surfaces
J. Houston Dycus, Kelsey J. Mirrielees, Everett D. Grimley +6
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from b…
Probing collective oscillation of -orbital electrons at the nanoscale
Rohan Dhall, Derek Vigil-Fowler, J. Houston Dycus +5
Here we demonstrate that high energy electrons can be used to explore the collective oscillation of , , and orbital electrons at the nanometer length scale. Using epitaxi…