2 papers
cond-mat.mtrl-sci2022
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Y. Wang, K. Huynh, M. E. Liao +9
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…
cond-mat.mtrl-sci2017
Structure of Native Two-dimensional Oxides on III--Nitride Surfaces
J. Houston Dycus, Kelsey J. Mirrielees, Everett D. Grimley +6
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from b…