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20172026
most citedOn the Origin of Carrier Loss in Mg-Doped N-Polar GaN

2 citations · 3 across the 5 of their papers we have counts for

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Showing 2022Show all

1 paper · 1 filter

cond-mat.mtrl-sci2022

Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing

Y. Wang, K. Huynh, M. E. Liao +9

Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…