On the Origin of Carrier Loss in Mg-Doped N-Polar GaN

Masahiro Kamiyama; Shashwat Rathkanthiwar; Cristyan Quiñones-García; Seiji Mita; Dolar Khachariya; Pramod Reddy; Ronny Kirste; Ramón Collazo; Zlatko Sitar

doi:10.1063/5.0282677

paper

On the Origin of Carrier Loss in Mg-Doped N-Polar GaN

arXiv:2510.04381 · doi:10.1063/5.0282677

Abstract

The neutral $(V_{N} - 3 M g_{G a})^{0}$ complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ~ $1 0^{19} c m^{- 3}$ . Temperature-dependent Hall measurements, in conjunction with a charge balance model, revealed that the carrier loss was due to a drastic reduction in acceptor concentration ( $N_{A}$ ), suggesting that a significant fraction of Mg atoms incorporated in an electrically neutral configuration. A quantitative semi-empirical model based on the grand canonical formalism pointed to the formation of $(V_{N} - 3 M g_{G a})^{0}$ complexes as the primary cause for the observed carrier loss.