2 citations · 2 across the 3 of their papers we have counts for
3 papers
On the Origin of Carrier Loss in Mg-Doped N-Polar GaN
Masahiro Kamiyama, Shashwat Rathkanthiwar, Cristyan Quiñones-García +6
The neutral complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] e…
Fringe field control of one-dimensional room temperature quantum transport in site controlled AlGaN/GaN lateral nanowires
K. S. Akhil, Dolar Khachariya, Mudassar Meer +2
We have demonstrated effective fringe field control of one-dimensional electron gas (1-DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a combin…
Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires
Debashree Banerjee, Maharaja B. Nadar, Pankaj Upadhyay +7
We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub…