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cond-mat.mtrl-sci2025
On the Origin of Carrier Loss in Mg-Doped N-Polar GaN
Masahiro Kamiyama, Shashwat Rathkanthiwar, Cristyan Quiñones-García +6
The neutral complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] e…
cond-mat.mtrl-sci2022
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Y. Wang, K. Huynh, M. E. Liao +9
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…
cond-mat.mtrl-sci2017
Structure of Native Two-dimensional Oxides on III--Nitride Surfaces
J. Houston Dycus, Kelsey J. Mirrielees, Everett D. Grimley +6
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from b…