Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector

Abstract

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.

References in corpus (2)

• A Short Wavelength GigaHertz Clocked Fiber-Optic Quantum Key Distribution System
• Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APD's

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• Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution
• Ultrafast non-destructive measurement of the quantum state of light using free electrons
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• Hybrid-Integrated InGaAs/InP SPAD Arrays for Quantum Communications