Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model

Abstract

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge Z1*, and a local charge density dependent electronic stopping power for a proton. There is only a single adjustable parameter in the model, namely the one electron radius rs0 which controls Z1*. By fine tuning this parameter, we obtain excellent agreement between simulated dopant profiles and the SIMS data over a wide range of energies for the channeling case. Our work provides a further example of implant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generality for studies of physical processes involving electronic stopping.

11 pages, 7 figures. See http://bifrost.lanl.gov/~reed/

References in corpus (1)

• A phenomenological electronic stopping power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon

Cited by in corpus (4)

• Repulsive interatomic potentials calculated at three levels of theory
• An Efficient Molecular Dynamics Scheme for Predicting Dopant Implant Profiles in Semiconductors
• Simulation of ion track ranges in uranium oxide
• Efficient Parallel Algorithm for Statistical Ion Track Simulations in Crystalline Materials