67 citations · 166 across the 6 of their papers we have counts for
6 papers
Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations
Benjamin P. Haley, Keith M. Beardmore, Niels Grønbech-Jensen
Diffusion and clustering of lattice vacancies in silicon as a function of temperature, concentration, and interaction range are investigated by Kinetic Lattice Monte Carlo simulati…
Interactions Between Charged Spheres in Divalent Counterion Solution
Niels Gronbech-Jensen, Keith M Beardmore, Philip Pincus
We simulate model systems of charged spherical particles in their counterion solution and measure the thermodynamic pressure and the pair distribution function from which we derive…
Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model
D. Cai, C. M. Snell, K. M. Beardmore +1
We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized int…
An Efficient Molecular Dynamics Scheme for the Calculation of Dopant Profiles due to Ion Implantation
Keith M. Beardmore, Niels Gronbech-Jensen
We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several meth…
An Efficient Molecular Dynamics Scheme for Predicting Dopant Implant Profiles in Semiconductors
Keith M. Beardmore, Niels Gronbech-Jensen
We present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials.…
Direct simulation of ion beam induced stressing and amorphization of silicon
Keith M. Beardmore, Niels Gronbech-Jensen
Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simu…