67 citations · 166 across the 6 of their papers we have counts for
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physics.comp-ph1999★ 24 cited
Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model
D. Cai, C. M. Snell, K. M. Beardmore +1
We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized int…
physics.comp-ph1999★ 67 cited
An Efficient Molecular Dynamics Scheme for the Calculation of Dopant Profiles due to Ion Implantation
Keith M. Beardmore, Niels Gronbech-Jensen
We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several meth…