54 citations · 78 across the 2 of their papers we have counts for
2 papers
physics.comp-ph1999★ 24 cited
Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model
D. Cai, C. M. Snell, K. M. Beardmore +1
We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized int…
physics.comp-ph1999★ 54 cited
A phenomenological electronic stopping power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon
David Cai, Niels Gronbech-Jensen, Charles M. Snell +1
It is crucial to have a good phenomenological model of electronic stopping power for modeling the physics of ion implantation into crystalline silicon. In the spirit of the Brandt-…