The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Abstract

Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated.

14 pages, 8 figures, submitted to Nucl. Instrum. Meth. Phys. Res. B

References in corpus (1)

• Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance

Cited by in corpus (4)

• The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation
• Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
• Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions
• Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions