Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions

Abstract

In the present paper, the phenomenological model developed by the authors in previous papers has been used to evaluate the degradation induced by hadron irradiation at the future accelerator facilities or by cosmic protons in high resistivity silicon detectors. The damage has been analysed at the microscopic (defects production and their evolution toward equilibrium) and at the macroscopic level (changes in the leakage current of the p-n junction). The rates of production of primary defects, as well as their evolution toward equilibrium have been evaluated considering explicitly the type of the projectile particle and its energy. Vacancy-interstitial annihilation, interstitial migration to sink, complex (VP, VO, CiOi, CiCs) and divacancy formation are taken into account for different initial silicon material. The influence of these defects on the leakage detector current has been calculated in the frame of the Schokley-Read-Hall model.

13 pages, 4 figures, submitted to Physica Scripta, place of the last figure changed

References in corpus (3)

• Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors
• The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors
• Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance

Cited by in corpus (2)

• Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
• Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions