Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

Abstract

In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are considered. The results of the model support the experimental available data. The correlation between the initial material parameters, temperature, irradiation and annealing history is established. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators or for space missions.

14 pages, 6 figures, to be published in Nucl. Instr. Meth. Phys. Res. A

References in corpus (1)

• Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance

Cited by in corpus (5)

• The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation
• Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
• Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions
• Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions
• Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors