The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation

Abstract

The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The analysis of the behaviour of silicon detectors after irradiation conduces to a good or reasonable agreement between theoretical calculations and experimental data for the time evolution of the leakage current and effective carrier concentration after lepton and gamma irradiation and large discrepancies after hadron irradiation and this in conditions where a reasonable agreement is obtained between experimental and calculated concentrations of complex defects. In this contribution, we argue that the main discrepancies could be solved naturally considering as primary defects the self-interstitials, classical vacancies and the new predicted fourfold coordinated silicon pseudo-vacancy defects. This new defect is supposed to be introduced uniformly in the bulk during irradiation, has deep energy level(s) in the gap and it is stable in time. Considering the mechanisms of production of defects and their kinetics, it was possible to determine indirectly the characteristics of the SiFFCD defect: energy level in the band gap and cross section for minority carrier capture. In the frame of the model, the effects of primary defects on the degradation of silicon detectors are important in conditions of continuous long time irradiation and /or high fluences.

version to appear in Physica Scripta

References in corpus (6)

• A fourfold coordinated point defect in silicon
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• The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors
• Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments
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Cited by in corpus (4)

• Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter
• Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments
• Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy
• Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity