Comparative Energy Dependence of Proton and Pion Degradation in Diamond

Abstract

A comparative theoretical study of the damages produced by protons and pions, in the energy range 50 MeV - 50 GeV, in diamond, is presented. The concentration of primary defects (CPD) induced by hadron irradiation is used to describe material degradation. The CPD has very different behaviours for protons and pions: the proton degradation is important at low energies and is higher than the pion one in the whole energy range investigated, with the exception of the Delta33 resonance region, where a large maximum of the degradation exists for pions. In comparison with silicon, the most investigated and the most studied material for detectors, diamond theoretically proves to be one order of magnitude more resistant, both to proton and pion irradiation.

7 pages, 5 figures

Cited by in corpus (4)

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• The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors
• Annealing of radiation induced defects in silicon in a simplified phenomenological model
• Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions