Theoretical calculations of the primary defects induced by pions and protons in SiC
arXiv:physics/0007011 · doi:10.1016/S0168-9002(01)02147-7
Abstract
In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
9 pages, 2 figures, in press to Nuclear Instruments and Methods in Physics Research A v2 - modified title, and major revisions