Quantum ballistic transport in constrictions of n-PbTe

Abstract

Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching of high--electron mobility films grown by MBE on BaF_2. In the moderately strong magnetic fields perpendicular to the current, B>1T, the conductance shows accurate quantization in the units of 1e^2/h as a function of the side-gate voltage. In the absence of the field, a temperature-independent step structure, with an average step height approx. 1e^2/h, is observed. It is suggested that such a quantization may reflect the lifting of the Kramers degeneracy by the exchange interaction among the electrons, effective despite a large dielectric constant of bulk PbTe.

arXiv comment4 pages, 4 Postscript figures

References in corpus (3)

• Possible Spin Polarization in a One-Dimensional Electron Gas
• Temperature dependence of the ``0.7'' 2(e^2)/h quasi plateau in strongly confined quantum point contacts
• Quantum ballistic transport in in-plane-gate transistors showing onset of a novel ferromagnetic phase transition

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• Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells
• Recent progress on Majorana in semiconductor-superconductor heterostructures--Engineering and detection
• Conductance Quantization in PbTe Nanowires
• Observation of Aharonov-Bohm effect in PbTe nanowire networks