activity
19992005
most citedIn-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

204 citations · 341 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2005★ 33 cited

Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells

G. Grabecki, J. Wrobel, T. Dietl +7

Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between PbEuTe barriers. Becaus…

cond-mat.mtrl-sci2004★ 204 cited

In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

M. Sawicki, K-Y. Wang, K. W. Edmonds +9

We show, by SQUID magnetometry, that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions and that it…

cond-mat.mes-hall2003★ 4 cited

Unidirectional Transmission of Electrons in a Magnetic Field Gradient

G. Grabecki, J. Wrobel, K. Fronc +7

The work presents an experimental demonstration of time-reversal asymmetry of electron states propagating along boundary separating areas with opposite magnetic fields. For this pu…

cond-mat.mes-hall2002★ 71 cited

Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells

J. Jaroszynski, T. Andrearczyk, G. Karczewski +7

We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field…

cond-mat.mtrl-sci2001★ 6 cited

Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures

T. Andrearczyk, J. Jaroszynski, G. Karczewski +6

We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to…

cond-mat.mes-hall1999★ 23 cited

Quantum ballistic transport in constrictions of n-PbTe

G. Grabecki, J. Wrobel, T. Dietl +7

Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching o…