Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

Abstract

We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.

3 pages, 2 figures

References in corpus (1)

• Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect

Cited by in corpus (6)

• The Quantum Hall Transition in Real Space: From Localized to Extended States
• Two-dimensional superconducting state of monolayer Pb films grown on GaAs(110) in a strong parallel magnetic field
• Scanning tunneling spectroscopy of a dilute two-dimensional electron system exhibiting Rashba spin splitting
• Probing electron-electron interaction in quantum Hall systems with scanning tunneling spectroscopy
• Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces
• Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces