38 citations · 127 across the 8 of their papers we have counts for
8 papers
Nonequilibrium theory of the conversion-efficiency limit of solar cells including thermalization and extraction of carriers
Kenji Kamide, Toshimitsu Mochizuki, Hidefumi Akiyama +1
The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a t…
Sub-Cycle Optical Response Caused by Dressed State with Phase-Locked Wavefunctions
K. Uchida, T. Otobe, T. Mochizuki +7
The coherent interaction of light with matter imprints the phase information of the light field on the wavefunction of the photon-dressed electronic state. Driving electric field,…
Time-resolved observation of coherent excitonic nonlinear response with a table-top narrowband THz pulse wave
K. Uchida, H. Hirori, T. Aoki +9
By combining a tilted-pulse-intensity-front scheme using a LiNbO3 crystal and a chirped-pulse-beating method, we generated a narrowband intense terahertz (THz) pulse, which had a m…
Large Enhancement of the Photoluminescence Emission of Photoexcited Undoped GaAs Quantum Wells Induced by an Intense Single-Cycle Terahertz Pulse
K. Shinokita, H. Hirori, K. Tanaka +5
Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excito…
Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces
Toshimitsu Mochizuki, Ryuichi Masutomi, Tohru Okamoto
Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresista…
Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces
Masaaki Minowa, Ryuichi Masutomi, Toshimitsu Mochizuki +1
Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The su…