Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect
arXiv:cond-mat/0507135 · doi:10.1063/1.2009811
Abstract
Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction band minimum. The observations of the quantized Hall resistance and zero longitudinal resistivity demonstrate the perfect two-dimensionality of the surface electron system. We also observed the Rashba effect due to the strong asymmetry of the confining potential well.
3 pages, 5 figures, to be published in Appl. Phys. Lett
References in corpus (2)
Cited by in corpus (5)
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- Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces
- Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect
- Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces