Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy

Abstract

We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence.

References in corpus (1)

• Macroscopic polarization and band offsets at nitride heterojunctions

Cited by in corpus (9)

• Single-photon superradiance from a quantum dot
• Polarized emission of GaN/AlN quantum dots : single dot spectroscopy and symmetry-based theory
• Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxy
• Large quantum dots with small oscillator strength
• GaN/AlN Quantum Dots for Single Qubit Emitters
• Measuring the effective phonon density of states of a quantum dot
• Acceptor and donor impurities in GaN nanocrystals
• Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters
• Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources