155 citations · 385 across the 7 of their papers we have counts for
7 papers
Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
Gilles Nogues, Thomas Auzelle, Martien Den Hertog +2
We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning tran…
Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots
A. Balocchi, J. Renard, C. T. Nguyen +6
We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quas…
Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy
F. Rol, S. Founta, H. Mariette +6
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emi…
In situ resonant x-ray study of vertical correlation and capping e ects during GaN/AlN quantum dots growth
J. Coraux, H. Renevier, V. Favre-Nicolin +2
Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of g…
Nucleation and Growth of GaN/AlN Quantum Dots
C. Adelmann, B. Daudin, R. A. Oliver +2
We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their he…
Gallium adsorption on (0001) GaN surfaces
C. Adelmann, J. Brault, G. Mula +3
We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the fra…