Gallium adsorption on (0001) GaN surfaces

Abstract

We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.

9 pages, 10 figures

References in corpus (2)

• Density-functional theory calculations for poly-atomic systems: Electronic structure, static and elastic properties and ab initio molecular dynamics
• Adatom Diffusion at GaN (0001) and (000bar1) Surfaces

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