activity
20022022
most citedCoexisting Non-Equilibrium Condensates with Long-Range Spatial Coherence in Semiconductor Microcavities

104 citations · 451 across the 15 of their papers we have counts for

collaborators

16 papers

physics.optics2022★ 5 cited

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

Sergi Cuesta, Lou Denaix, Florian Castioni +2

We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355…

physics.app-ph2021

Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission

Sergi Cuesta, Lou Denaix, Le Si Dang +1

In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss…

cond-mat.mtrl-sci2021

Optical net gain measurement on AlGaN/GaN multi-quantum well

Quang Minh Thai, Sergi Cuesta, Lou Denaix +5

We present net gain measurements at room temperature in AlGaN/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measur…

physics.optics2021★ 8 cited

AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers

Sergi Cuesta, Yoann Curé, Fabrice Donatini +9

We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous a…

cond-mat.mtrl-sci2015★ 27 cited

Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires

R. Songmuang, Le Thuy Thanh Giang, J. Bleuse M. Den Hertog +2

We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular be…

cond-mat.mtrl-sci2014★ 37 cited

Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission

C. Himwas, M. den Hertog, Le Si Dang +2

The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This i…