Field-effect transistors assembled from functionalized carbon nanotubes

Abstract

We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices we have fabricated show excellent electrical characteristics.

5 pages, 6 figures

References in corpus (9)

• Excitonic Effects and Optical Spectra of Single-Walled Carbon Nanotubes
• Scaling of excitons in carbon nanotubes
• Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics
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• Drain Voltage Scaling in Carbon Nanotube Transistors
• Band Structure and Quantum Conductance of Nanostructures from Maximally-Localized Wannier Functions: The Case of Functionalized Carbon Nanotubes
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• Self-aligned carbon nanotube transistors with charge transfer doping
• Electronic Devices Based on Purified Carbon Nanotubes Grown By High Pressure Decomposition of Carbon Monoxide

Cited by in corpus (8)

• Cycloaddition Functionalizations to Preserve or Control the Conductance of Carbon Nanotubes
• Quantum dot attachment and morphology control by carbon nanotubes
• Hindered rolling and friction anisotropy in supported carbon nanotubes
• Interaction of solid organic acids with carbon nanotube field effect transistors
• Oxygen and light sensitive field-effect transistors based on ZnO nanoparticles attached to individual double-wall carbon nanotubes
• High Performance n- and p-Type Field-Effect Transistors Based on Hybridly Surface-Passivated Colloidal PbS Nanosheets
• Mapping of functionalized regions on carbon nanotubes by scanning tunneling microscopy
• Function follows form: From semiconducting to metallic towards superconducting PbS nanowires by faceting the crystal