Millisecond spin-flip times of donor-bound electrons in GaAs
arXiv:cond-mat/0610524 · doi:10.1103/PhysRevB.74.121304
Abstract
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.
4 pages, 4 figures