Millisecond spin-flip times of donor-bound electrons in GaAs

Abstract

We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.

arXiv comment4 pages, 4 figures

References in corpus (7)

• Quantum Computation with Quantum Dots
• Long-distance quantum communication with atomic ensembles and linear optics
• Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
• Phonon-induced decay of the electron spin in quantum dots
• Hybrid quantum repeater using bright coherent light
• Coherent Population Trapping of Electron Spins in a Semiconductor
• Phonon-mediated electron spin phase diffusion in a quantum dot

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• Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
• Coherence properties of shallow donor qubits in ZnO
• Quantum Interference Controls the Electron Spin Dynamics in n-GaAs
• Electron charge and spin delocalization revealed in the optically probed longitudinal and transverse spin dynamics in $n$-GaAs
• Ensemble spin relaxation of shallow donor qubits in ZnO
• Spin relaxation in the impurity band of a semiconductor in the external magnetic field
• Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy
• Selective measurement of the longitudinal electron spin relaxation time $T_1$ of Ce${}^{3+}$ ions in a YAG lattice: Resonant spin inertia
• Multi-spin errors in the optical control of a spin quantum memory
• Radiative properties of multi-carrier bound excitons in GaAs
• Long-lived electron spins in a modulation doped (100) GaAs quantum well