5 papers
Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode
J. M. L. Figueiredo, A. R. Boyd, C. R. Stanley +3
We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD…
Optical modulation in a resonant tunneling relaxation oscillator
J. M. L. Figueiredo, C. R. Stanley, A. R. Boyd +1
We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide an…
Ultra-low voltage resonant tunnelling diode electroabsorption modulator
J. M. L. Figueiredo, C. N. Ironside, C. R. Stanley
Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at o…
Terahertz-induced depletion of the ground-state population of neutral donors in GaAs measured by resonant elastic light scattering from donor-bound excitons
D. G. Allen, C. R. Stanley, M. S. Sherwin
Strong resonant elastic light scattering (RELS) from the donor-bound exciton transition in GaAs (1.514eV) occurs at neutral donors in the ground (1S) state, but not at neutral dono…
A quantum coherent approach to transport and noise in double barrier resonant diodes: shot noise a way to distinguish coherent from sequential tunneling
V. Ya. Aleshkin, L. Reggiani, N. V. Alkeev +4
We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double barrier resonant diodes. Theo…