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20032006
most citedMillisecond spin-flip times of donor-bound electrons in GaAs

28 citations · 28 across the 6 of their papers we have counts for

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Showing 2005Show all

6 papers · 1 filter

cond-mat.mes-hall2005

Coherent Population Trapping of Electron Spins in a Semiconductor

Kai-Mei C. Fu, Charles Santori, Colin Stanley +2

In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman…

physics.optics2005

Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode

J. M. L. Figueiredo, A. R. Boyd, C. R. Stanley +3

We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD…

physics.optics2005

Optical modulation in a resonant tunneling relaxation oscillator

J. M. L. Figueiredo, C. R. Stanley, A. R. Boyd +1

We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide an…

physics.optics2005

Ultra-low voltage resonant tunnelling diode electroabsorption modulator

J. M. L. Figueiredo, C. N. Ironside, C. R. Stanley

Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at o…

cond-mat.mes-hall2005

Electric field switching in a resonant tunneling diode electroabsorption modulator

J. M. L. Figueiredo, C. N. Ironside, C. R. Stanley

The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to wi…

quant-ph2005

Terahertz-induced depletion of the ground-state population of neutral donors in GaAs measured by resonant elastic light scattering from donor-bound excitons

D. G. Allen, C. R. Stanley, M. S. Sherwin

Strong resonant elastic light scattering (RELS) from the donor-bound exciton transition in GaAs (1.514eV) occurs at neutral donors in the ground (1S) state, but not at neutral dono…