Space Charge Effects in Ferroelectric Thin Films

Abstract

The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squarer loops were observed in the partially depleted cases and a method was proposed to identify fully depleted samples experimentally from dielectric and polarization measurements alone. Unusual field distributions found for higher dopant concentrations have some interesting implications for leakage mechanisms and limit the range of validity of usual semiconductor equations for carrier transport.

23 pages, 11 figures

References in corpus (9)

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• Interface-Controlled Ferroelectricity at the Nanoscale
• Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures
• Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors
• Internal electric field originated from mismatch effect and its influence on ferroelectric thin film properties
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Cited by in corpus (8)

• Conduction through 71o domain walls in BiFeO3 thin films
• Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors
• Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures
• Charge effects in donor doped perovskite ferroelectrics
• Thickness-dependent self-polarization-induced intrinsic magnetoelectric effects in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 heterostructures
• Hysteretic electrical transport in BaTiO${}_3$/Ba${}_{1-x}$Sr${}_x$TiO${}_3$/Ge heterostructures
• Depletion layer-induced size effects in ferroelectric thin films: A Ginzburg-Landau model study
• Influence of space charge on domain patterns and susceptibility in a rhombohedral ferroelectric film