Depletion layer-induced size effects in ferroelectric thin films: A Ginzburg-Landau model study
arXiv:1304.5057 · doi:10.1103/PhysRevB.86.094104
Abstract
A Ginzburg-Landau model is used to demonstrate how depletion layers give rise to thickness-dependent ferroelectric properties in thin films. It is shown that free charge layers at the film-electrode interface can result in an internal electric field in the bulk of the film even when no external voltage is applied. At high values of the donor dopant density and small thicknesses, this internal electric field can be strong enough to lead to the formation of a domain pattern. This causes a drop in the remnant polarization; a direct demonstration of the important role free charge plays in thin ferroelectric films.
arXiv comment16 pages, 7 figures
References in corpus (7)
- Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films
- Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors
- Space Charge Effects in Ferroelectric Thin Films
- Depolarizing field and "real" hysteresis loops in nanometer-scale ferroelectric films
- Ferroelectric Phase Transitions in Films with Depletion Charge
- Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures
- Space-charge mechanism of aging in ferroelectrics: an exactly solvable two-dimensional model