Hysteretic electrical transport in BaTiO${}_3$/Ba${}_{1-x}$Sr${}_x$TiO${}_3$/Ge heterostructures

Abstract

We present electrical transport measurements of heterostructures comprised of BaTiO${}_3$ and Ba${}_{1-x}$Sr${}_x$TiO${}_3$ epitaxially grown on Ge. The Sr-alloying imparts compressive strain to the BaTiO${}_3$, which enables the thermal expansion mismatch between BaTiO${}_3$ and Ge to be overcome to achieve $c$-axis oriented growth. The conduction bands of BaTiO${}_3$ and Ba${}_{1-x}$Sr${}_x$TiO${}_3$ are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching.

References in corpus (2)

• Space Charge Effects in Ferroelectric Thin Films
• Hysteretic electrical transport in BaTiO${}_3$/Ba${}_{1-x}$Sr${}_x$TiO${}_3$/Ge heterostructures

Cited by in corpus (3)

• Hysteretic electrical transport in BaTiO${}_3$/Ba${}_{1-x}$Sr${}_x$TiO${}_3$/Ge heterostructures
• Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface
• Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3