Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors
arXiv:cond-mat/0607585 · doi:10.1063/1.2382479
Abstract
We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects.
17 pages, 7 figures
References in corpus (1)
Cited by in corpus (6)
- Conduction at domain walls in insulating Pb(ZrTi)O thin films
- Space Charge Effects in Ferroelectric Thin Films
- DC Leakage behavior and Conduction Mechanism in (BiFeO3)m(SrTiO3)m Superlattices
- Photoconductivity and photo-detection response of multiferroic bismuth iron oxide
- Electrical Degradation in Dielectric and Piezoelectric Oxides: Review of Defect Chemistry and Associated Characterization Techniques
- Conduction mechanism and switchable photovoltaic effect in (111) oriented BiFeMnO thin film