Generating Spin Currents in Semiconductors with the Spin Hall Effect

Abstract

We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.

4 pages, 4 figures

References in corpus (5)

• Dissipationless Quantum Spin Current at Room Temperature
• Current induced electron spin polarization in strained semiconductors
• On A Proper Definition of Spin Current
• Theory of Spin Hall conductivity in n-doped GaAs
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

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