Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

Abstract

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.

arXiv comment4 pages, 2 figures

References in corpus (7)

• Spin current and polarization in impure 2D electron systems with spin-orbit coupling
• Orbital mechanisms of electron spin manipulation by an electric field
• Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells
• Universal Quantum Computation through Control of Spin-Orbit Coupling
• Tunneling spin-galvanic effect
• Two-dimensional hole precession in an all-semiconductor spin field effect transistor
• Effects of an electron gas on the negative trion in semiconductor quantum wells

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