activity
20062026
most citedAharonov-Bohm interference in quantum ring exciton: effects of built-in electric fields

88 citations · 303 across the 35 of their papers we have counts for

collaborators

35 papers

cond-mat.mtrl-sci2026

Beyond Impedance Additivity: A Systematic Nonlinear Perspective on Memristor Associations

Luiz A. Meneghetti, Leonardo K. Castelano, Antônio Sérgio dos Santos +5

We investigate the validity of the superposition principle and impedance additivity in AC circuits containing a memristive device connected in series with a resistor, capacitor, or…

physics.app-ph2025★ 1 cited

Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices

Soumen Pradhan, Victor Lopez-Richard, Igor Ricardo Filgueira e Silva +8

Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here…

cond-mat.mes-hall2025

A topological field-effect memristor

Manuel Meyer, Selena Barragan, Sergey Krishtopenko +13

Overcoming the limitations of the von Neumann architecture requires new computational paradigms capable of solving complex problems efficiently. Quantum and neuromorphic computing…

physics.app-ph2025★ 1 cited

2D Canonical Approach for Beating the Boltzmann Tyranny Using Memory

Rafael Schio Wengenroth Silva, Soumen Pradhan, Fabian Hartmann +4

The 60 mVdecade subthreshold limit at room temperature, coined as the Boltzmann tyranny, remains a fundamental obstacle to the continued down-scaling of conventional transistors…

cond-mat.dis-nn2025

Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing

Soumen Pradhan, Kirill Miller, Fabian Hartmann +9

Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI,…

physics.app-ph2025★ 1 cited

Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming

Gabriel L. Rodrigues, Ana B. Yoshida, Guilherme S. Selmi +7

We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal…