A near-field scanned microwave probe for spatially localized electrical metrology

Abstract

We have developed a near-field scanned microwave probe with a sampling volume of approximately 10 micron in diameter, which is the smallest one achieved in near-field microwave microscopy. This volume is defined to confine close to 100 percent of the probe net sampling reactive energy, thus making the response virtually independent on the sample properties outside of this region. The probe is formed by a 4 GHz balanced stripline resonator with a few-micron tip size. It provides non-contact, non-invasive measurement and is uniquely suited for spatially localized electrical metrology applications, e.g. on semiconductor production wafers.

6 pages, 3 figures, submitted to Appl. Phys. Lett

References in corpus (1)

• Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope

Cited by in corpus (4)

• Nanometer-Scale Materials Contrast Imaging with a Near-Field Microwave Microscope
• Near-field scanning microwave microscope for interline capacitance characterization of nanoelectronics interconnect
• Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe
• Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers