Anderson localization in carbon nanotubes: defect density and temperature effects

Abstract

The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, around 15-65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.

4 pages, 4 figures

References in corpus (4)

• Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes
• Tuning the conductance of single-walled carbon nanotubes by ion irradiation in the Anderson localization regime
• Fractional quantum conductance in carbon nanotubes
• First-principles Simulations of the stretching and final breaking of Al nanowires: Mechanical properties and electrical conductance

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