Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Abstract

We study the electron transport in metallic carbon nanotubes (CNTs) with realistic defects of different types. We focus on large CNTs with many defects in the mesoscopic range. In a recent paper we demonstrated that the electronic transport in those defective CNTs is in the regime of strong localization. We verify by quantum transport simulations that the localization length of CNTs with defects of mixed types can be related to the localization lengths of CNTs with identical defects by taking the weighted harmonic average. Secondly, we show how to use this result to estimate the conductance of arbitrary defective CNTs, avoiding time consuming transport calculations.

References in corpus (7)

• Inelastic transport theory from first-principles: methodology and applications for nanoscale devices
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Scaling theory put into practice: first-principles modeling of transport in doped silicon nanowires
• Efficient calculation of inelastic vibration signals in electron transport: Beyond the wide-band approximation
• Ab initio study of transport properties in defected carbon nanotubes: an O(N) approach
• Strong localization in defective carbon nanotubes: a recursive Green's function study
• Electronic Transport Properties of Chemically Modified Double-Walled Carbon Nanotubes

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