Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As
arXiv:cond-mat/0505222 · doi:10.1103/PhysRevLett.95.187206
Abstract
A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.
4 pages, 4 figures
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- Electrothermal Actuation of NEMS Resonators: Modeling and Experimental Validation
- A universal platform for magnetostriction measurements in thin films
- Nonlocal effects on magnetism in the diluted magnetic semiconductor Ga_{1-x}Mn_{x}As
- Influence of the different strains components on the uniaxial magnetic anisotropy constants for (Ga,Mn)As bulk system: a First-Principles Study
- Magnetoelastic Coupling and Possibility of Spintronic Electromagnetomechanical Effects