Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime

Abstract

We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor νapproaches an integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if magnetic field B increases further, R_{xy} decreases to its normal value. It is shown that in the investigated sample n-Si/Si_{0.7}Ge_{0.3}, overshoots exist for almost all ν. Existence of overshoot in R_{xy} observed in different materials and for different ν, where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves R_{xy}(ν) for ν= 3 and ν= 5 with and without overshoot showed that this effect exist in the whole interval between plateaus, not only in the region where R_{xy} exceeds the normal plateau value.

3 pages, 5 EPS figures

References in corpus (1)

• Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

Cited by in corpus (6)

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• Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime
• Electron transport in a slot-gate Si MOSFET
• The Dip Effect under Integer Quantized Hall Conditions