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V. Ginodman

3 papers hereh-index 5106 citations21 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3

identity via Semantic Scholar / OpenAlex

activity
20032008
most citedManifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime

6 citations · 10 across the 2 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2008★ 4 cited

Electron transport in a slot-gate Si MOSFET

I. Shlimak, v. Ginodman, A. Butenko +2

The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and fi…

cond-mat.mes-hall2006★ 6 cited

Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime

I. Shlimak, V. Ginodman, K. -J. Friedland +1

We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic f…

cond-mat.mes-hall2003

Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

I. Shlimak, V. Ginodman, M. Levin +4

We have investigated temperature dependence of the longitudinal conductivity σxx​ at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime…

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