In situ photoemission study on atomically-controlled LaSrMnO thin films: Composition dependence of the electronic structure
arXiv:cond-mat/0406315 · doi:10.1103/PhysRevB.71.155420
Abstract
We have investigated change in the electronic structures of atomically-controlled LaSrMnO (LSMO) thin films as a function of hole-doping level () in terms of {\it in situ} photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The {\it in situ} PES measurements on a well-ordered surface of high-quality epitaxial LSMO thin films enable us to reveal their intrinsic electronic structures, especially the structure near the Fermi level (). We have found that overall features of valence band as well as the core levels monotonically shifted toward lower binding energy as was increased, indicating the rigid-band like behavior of underlying electronic structure of LSMO thin films. The peak nearest to due to the orbital is also found to move toward in a rigid-band manner, while the peak intensity decreases with increasing . The loss of spectral weight with in the occupied density of states was compensated by simultaneous increment of the shoulder structure in O 1 XAS spectra, suggesting the existence of a pseudogap, that is depression in spectral weight at , for all metallic compositions. These results indicate that the simple rigid-band model does not describe the electronic structure near of LSMO and that the spectral weight transfer from below to above across the gap dominates the spectral changes with in LSMO thin films.
8 pages, 8 figures
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