Spin injection in spin FETs using a step-doping profile
arXiv:cond-mat/0405591 · doi:10.1109/TNANO.2004.840150
Abstract
We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.
5 pages, 8 figures. This paper is based on the work presented at the 2004 IEEE NTC Quantum Device Technology Workshop (Clarkson Unviersity, Potsdam, NY, May 17-21, 2004), IEEE Transactions on Nanotechnology, accepted for publication
References in corpus (6)
- Spintronics: Fundamentals and applications
- Universal Intrinsic Spin-Hall Effect
- Dissipationless Quantum Spin Current at Room Temperature
- Magnetic bipolar transistor
- Decay of spin polarized hot carrier current in a quasi one-dimensional spin valve structure
- Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well